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Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Marchio:	ZMSH
Numero di modello:	3C-N SIC
MOQ:	10 pz
prezzo:	by case
Tempo di consegna:	in 30 giorni
Condizioni di pagamento:	T/T

Informazioni dettagliate

Descrizione di prodotto

Informazioni dettagliate

Luogo di origine:

Cina

Certificazione:

rohs

Misurare:

2 pollici, 4 pollici, 6 pollici, 5 × 5,10 × 10

Costante dielettrica:

9.7

Durezza superficiale:

Hv0.3> 2500

Densità:

3,21 g/cm3

Coefficiente di espansione termica:

4,5 x 10-6/k

Tensione di rottura:

5,5 mV/cm

Applicazioni:

Comunicazioni, sistemi radar

Imballaggi particolari:

scatola di plastica personalizzata

Capacità di alimentazione:

1000pc/mese

Descrizione di prodotto

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Pioneering Third-Generation Semiconductor Solutions

Fig 1. High-Purity 3C-SiC Semiconductor Wafer

With over a decade of dedicated expertise, ZMSH stands at the forefront of advanced material R&D. We deliver highly customized semiconductor substrates—including SiC, Silicon, Sapphire, and SOI wafers. Our silicon carbide portfolio comprehensively covers 4H, 6H, and 3C polytypes, offering scalable supply chains from 2-inch research samples to 12-inch mass-production wafers.

Built for Extreme Performance:
Our N-type 3C-SiC substrates are meticulously engineered for next-generation high-frequency power components and automotive EV inverters. They dramatically outperform traditional silicon by offering extraordinary thermal stability (up to 1,600°C) and superior thermal conductivity (49 W/m·K). Manufactured to rigorous aerospace-grade international standards, these wafers guarantee unwavering reliability in the most demanding operational environments.

Substrate Core Features

1. Versatile Dimensional Scalability:

Standard Formats: Available in 2", 4", 6", and 8" diameters.
Bespoke Geometry: Custom sizing starts from 5×5 mm to client-specific layouts.

2. Ultra-Low Defect Architecture:

Microvoid densities are strictly maintained below 0.1 cm^-2.
Exceptional resistivity control ensures maximum device yield and reliability.

3. Seamless Process Compatibility:

Optimized for intense fabrication steps like high-temperature oxidation and lithography.
Superior surface flatness achieved at λ/10 @632.8 nm.

Detailed Technical Specifications

Grade	Zero MPD Production Grade (Z Grade)	Standard Production Grade (P Grade)	Dummy Grade (D Grade)
Diameter	145.5 mm – 150.0 mm
Thickness	350 μm ± 25 μm
Wafer Orientation	Off axis: 2.0°–4.0° toward [1120] ± 0.5° for 4H/6H-P, On axis: <111> ± 0.5° for 3C-N
** Micropipe Density	0 cm^-2
** Resistivity	p-type 4H/6H-P	≤ 0.1 Ω·cm		≤ 0.3 Ω·cm
** Resistivity	n-type 3C-N	≤ 0.8 mΩ·cm		≤ 1 mΩ·cm
Primary Flat Orientation	4H/6H-P	{1010} ± 5.0°
Primary Flat Orientation	3C-N	{110} ± 5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Secondary Flat Orientation	Silicon face up, 90° CW. from Prime flat ± 5.0°
Edge Exclusion	3 mm		6 mm
LTV / TIV / Bow / Warp	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm		≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm
* Roughness	Polish	Ra ≤ 1 nm
* Roughness	CMP	Ra ≤ 0.2 nm		Ra ≤ 0.5 nm
Edge Cracks By High Intensity Light	None		Cum. length ≤ 10 mm, single ≤ 2 mm
* Hex Plates By High Intensity Light	Cumulative area ≤ 0.05%		Cumulative area ≤ 0.1%
* Polytype Areas By High Intensity Light	None		Cumulative area ≤ 3%
Visual Carbon Inclusions	None		Cumulative area ≤ 0.05%
# Silicon Surface Scratches By High Intensity Light	None		Cumulative length ≤ 1 × wafer diameter
Edge Chips High By Intensity Light	None permitted ≥ 0.2mm width and depth		5 allowed, ≤ 1 mm each
Silicon Surface Contamination By High Intensity	None
Packaging	Multi-wafer Cassette or Single Wafer Container

Primary Application Scenarios

1. High-Frequency RF & 5G Communications

Vital as RF device substrates for 5G Base Stations, allowing efficient mmWave signal propagation. Crucial for Advanced Radar Systems where low attenuation ensures precision targeting.

2. Electric Mobility (EVs)

Revolutionizes On-Board Chargers (OBC) by cutting energy losses by 40% in 800V architectures. Upgrades DC/DC Converters to reduce energy waste by up to 90%, significantly boosting vehicle range.

3C-SiC Substrates FAQ

Q1: What exactly is a 3C-SiC substrate?

A: 3C-SiC refers to cubic silicon carbide. It is a highly specialized semiconductor material characterized by a cubic crystalline structure. It delivers phenomenal electron mobility (1,100 cm²/V·s) and robust thermal conductivity (49 W/m·K).

Search Tags: #SiliconCarbideSubstrate #3C_N_Type_SIC #SemiconductorMaterials #3C_SiC_Substrate #ProductionGrade #5G_Communications #EV_Inverters

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Il cavo ha visto la macchina

Zaffiro sintetico Rod

Piatto del quarzo fuso

Parti dello zaffiro

Pietra preziosa sintetica

Attrezzatura a semiconduttore

Wafer LiNbO3

Wafer del fosfuro di indio

substrato ceramico

Involucro del laboratorio

Wafer del nitruro di gallio

Wafer di GaAs

Dettagli dei prodotti

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Premium 3C-SiC Substrates: N-Type Production Grade Wafers for 5G & Power Electronics

Pioneering Third-Generation Semiconductor Solutions

Substrate Core Features

Detailed Technical Specifications

Primary Application Scenarios

1. High-Frequency RF & 5G Communications

2. Electric Mobility (EVs)

3C-SiC Substrates FAQ

sic wafer

sic substrato

substrato del carburo di silicio

Substrati in carburo di silicio 4H-N di alta qualità (12 pollici/300 mm) per dispositivi ad alta potenza

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