Dettagli:
Termini di pagamento e spedizione:
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Misurare: | 6 pollici | Spessore: | 200-300 um |
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Materiale: | 4H-SiC | tipo di conducibilità: | Tipo n (drogato con azoto) |
Resistività: | Qualunque | TTV: | µm del ≤ 10 |
Arco/filo di ordito: | ≤ 20 µm | Confezione: | Chiuso sotto vuoto |
Evidenziare: | 6inch SiC epitaxial wafer,SiC wafer for UHV MOS device,100μm SiC substrate with warranty |
4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (100μm, 200μm, 300μm) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.
1. High Breakdown Voltage & Low On-Resistance
2. Exceptional Thermal Stability & Reliability
3. Low Defect Density & High Uniformity
4. Compatibility with Advanced Fabrication Processes
1.Ultra-High Voltage Power Devices
2.Smart Grids & Energy Storage
3.Rail Transit & Aerospace
4.Research & High-Tech Manufacturing
Parameter | Specification / Value |
Size | 6 inch |
Material | 4H-SiC |
Conductivity Type | N-type (doped with Nitrogen) |
Resistivity | ANY |
Off-Axis Angle | 4°±0.5° off (typically toward [11-20] direction) |
Crystal Orientation | (0001) Si-face |
Thickness | 200-300 um |
Surface Finish Front | CMP polished (epi-ready) |
Surface Finish Back | lapped or polished (fastest option) |
TTV | ≤ 10 µm |
BOW/Warp | ≤ 20 µm |
Packaging | vacuum sealed |
QTY | 5 pcs |
*We accept customized one, please feel free to contact us about your requirements.
1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?
A: The typical thickness ranges from 100–500 μm to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.
2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?
A: They are critical for smart grids, EV inverters, industrial power systems, and aerospace, enabling high efficiency and reliability in extreme conditions.
Tags: #6inch, #Custom, #4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm
Persona di contatto: Mr. Wang
Telefono: +8615801942596