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Created with Pixso. Square Sapphire Substrate 10×10×1mm , C-plane , DSP , High Purity Single Crystal Al₂O₃

Square Sapphire Substrate 10×10×1mm , C-plane , DSP , High Purity Single Crystal Al₂O₃

Marchio: ZMSH
MOQ: 10
Tempo di consegna: 2-4 settimane
Condizioni di pagamento: T/T
Informazioni dettagliate
Luogo di origine:
Shangai
Materiale:
Elevata purezza >99,99%, monocristallo Al₂O₃
Dimensione:
10 × 10 mm
Spessore:
1 mm (altri spessori disponibili su richiesta)
Orientamento:
Dal piano C (0001) a M (1-100) 0,2° ± 0,1° disattivato
Parametro della grata:
a = 4.785 Å, c = 12.991 Å
Densità:
30,98 g/cm3
Coefficiente di espansione termica:
6,66×10⁻⁶ /°C (‖asse C), 5×10⁻⁶ /°C (⊥asse C)
Resistenza dielettrica:
4,8×10⁵ V/cm
Costante dielettrica:
11,5 (‖asse C), 9,3 (⊥asse C) a 1 MHz
Tangente di perdita dielettrica:
<1×10⁻⁴
Conducibilità termica:
40 W/(m·K) a 20°C
Evidenziare:

C Plane Sapphire Substrate

,

Single Crystal Sapphire Substrate

,

Square Sapphire Substrate

Descrizione di prodotto

Sapphire Substrate (DSP) Overview

The Double Side Polished Sapphire Substrate (DSP) is fabricated from high-purity (>99.99%) single crystal aluminum oxide (Al₂O₃). With both sides precision polished to atomic-level smoothness (Ra < 0.3 nm), this material offers excellent optical transparency, mechanical strength, and thermal stability. It is widely used in optical windows, laser components, semiconductor epitaxy, and scientific research applications.

Sapphire Substrate (DSP) Key Specifications

Parameter Specification
Material High Purity >99.99%, Single Crystal Al₂O₃
Dimension 10 × 10 mm
Thickness 1 mm (other thicknesses available upon request)
Orientation C-plane (0001) to M (1-100) 0.2° ± 0.1° off
Lattice Parameter a = 4.785 Å, c = 12.991 Å
Density 3.98 g/cm³
Thermal Expansion Coefficient 6.66×10⁻⁶ /°C (‖C-axis), 5×10⁻⁶ /°C (⊥C-axis)
Dielectric Strength 4.8×10⁵ V/cm
Dielectric Constant 11.5 (‖C-axis), 9.3 (⊥C-axis) @ 1 MHz
Dielectric Loss Tangent < 1×10⁻⁴
Thermal Conductivity 40 W/(m·K) at 20°C
Surface Quality Double Side Polished (DSP), Ra < 0.3 nm (AFM) on both sides
Flatness ≤ λ/10 @ 633 nm (typical)
Parallelism < 10 arc sec

Sapphire Substrate (DSP) Features & Advantages

  • Double-side optical polish for excellent flatness and parallelism

  • High transparency from UV to IR regions

  • Superior hardness (Mohs 9) and scratch resistance

  • Outstanding thermal and chemical stability

  • Excellent dielectric and insulating performance

  • Custom sizes and orientations available upon request

Sapphire Substrate (DSP) Applications

  • Optical windows and protective covers

  • Infrared and UV spectroscopy

  • Laser optics and photonics components

  • GaN/AlN epitaxial growth substrate

  • High-power and RF electronic devices

  • Research laboratories and semiconductor testing