| Marchio: | ZMSH |
| MOQ: | 10 |
| Tempo di consegna: | 2-4 settimane |
| Condizioni di pagamento: | T/T |
Ultra-Thin Silicon-Based Diamond Film is an advanced thermal management material fabricated by directly growing polycrystalline diamond on silicon substrates using Microwave Plasma Chemical Vapor Deposition (MPCVD) technology. With a diamond layer thickness below 1 μm and exceptional thermal conductivity, this material provides an effective near-junction heat spreading solution for next-generation semiconductor devices.
Unlike conventional thermal interface materials, the diamond film is integrated directly onto the silicon wafer, allowing heat to be dissipated at the source before thermal accumulation affects device performance. The technology is fully compatible with existing semiconductor manufacturing processes, enabling seamless integration into RF, power electronics, photonics, and advanced packaging applications.
Diamond is the highest thermal conductivity material known today, enabling rapid lateral heat spreading and significantly reducing hotspot formation.
Diamond thickness can be controlled below 1 μm while maintaining excellent thermal performance and structural stability.
Direct deposition on silicon wafers eliminates the need for additional thermal interface layers and reduces thermal resistance.
Compatible with standard silicon wafer processing, facilitating large-scale manufacturing and integration into existing production lines.
Available on 4-inch, 6-inch, and 8-inch silicon substrates to support various semiconductor manufacturing requirements.
Lower operating temperatures contribute to enhanced performance stability, extended device lifetime, and improved power density.
| Parameter | Specification |
|---|---|
| Material | Polycrystalline Diamond on Silicon |
| Deposition Method | MPCVD (Microwave Plasma Chemical Vapor Deposition) |
| Substrate Type | Silicon Wafer |
| Wafer Diameter | 4", 6", 8" |
| Diamond Thickness | < 1 μm |
| Thermal Conductivity | High Thermal Conductivity Diamond Layer |
| Surface Condition | As-Grown / Polished Available |
| Customization | Thickness and wafer specifications available |
| Application Level | Wafer-Level Thermal Management |
| Feature | Silicon-Based Diamond Film | Conventional Heat Spreader |
| Thermal Conductivity | Extremely High | Moderate |
| Integration Level | Direct Wafer-Level | Package-Level |
| Thermal Resistance | Very Low | Higher |
| Thickness | Ultra-Thin (<1 μm) | Typically Tens to Hundreds of μm |
| Process Compatibility | Excellent | Limited |
| Heat Spreading Efficiency | Superior | Standard |
Ideal for GaN RF amplifiers, microwave devices, and high-frequency communication systems where localized heating limits performance.
Suitable for Si, SiC, and GaN power devices requiring efficient thermal dissipation under high-power operation.
Improves thermal management for optical transceivers, lasers, modulators, and silicon photonics components.
Supports thermal control in advanced processors, accelerators, and high-density computing architectures.
Can be integrated into heterogeneous integration, chiplet architectures, and advanced semiconductor packaging solutions.
Our advanced MPCVD platform supports:
Strict process control ensures excellent film uniformity, thermal performance consistency, and scalable manufacturing for industrial applications.
The primary advantage is its ability to provide near-junction heat spreading directly on the wafer surface, reducing thermal resistance and improving device performance before heat accumulates inside the chip.
Yes. The technology is designed to be compatible with conventional silicon wafer processing and can be integrated into existing semiconductor manufacturing workflows.
Currently, silicon-based diamond films are available on 4-inch, 6-inch, and 8-inch silicon wafers, with customized specifications available upon request.