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Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm

Marchio:	ZMSH
Numero di modello:	Chuck del vuoto SIC specifico per il legame
MOQ:	5
prezzo:	by case
Tempo di consegna:	2-4 settimane
Condizioni di pagamento:	T/t

Informazioni dettagliate

Descrizione di prodotto

Informazioni dettagliate

Luogo di origine:

Cina

Certificazione:

rohs

Purezza materiale:

SIC ≥ 99,999%

Coefficiente di espansione termica:

~ 4,5 × 10⁻⁶/℃

Modulo elastico:

> 400 GPA

Piattenezza superficiale:

≤ 1 μm

Rugosità superficiale (RA):

≤0,01 μm

Precisione della scanalatura di adsorbimento:

± 5 μm

Imballaggi particolari:

Pacchetto in sala di pulizia di 100 gradi

Descrizione di prodotto

Bonding-Specific SiC Vacuum Chuck Brief

Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm

A Bonding-Specific Silicon Carbide (SiC) Vacuum Chuck is a high-performance ceramic adsorption component manufactured using reaction sintering or chemical vapor deposition (CVD) processes, specifically designed for semiconductor chip bonding processes. Its core function is to stably adsorb and secure wafers during bonding via vacuum negative pressure or electrostatic adsorption principles, ensuring micrometer or even sub-micrometer-level precise alignment and interconnection between chips and substrates or interposers under high-temperature and pressurized conditions. It employs ultra-high-purity silicon carbide ceramic as the base material, utilizing precisely engineered porous structures or surface electrode designs to provide uniform adsorption force during bonding, preventing wafer slippage or deformation.

Key Performance Parameters

Parameter Category	Parameter Name	Typical Value/Range
Material Characteristics	Material Purity	SiC ≥ 99.999%
	Coefficient of Thermal Expansion	~4.5×10⁻⁶/℃
	Thermal Conductivity	~120 W/(m·K) (room temperature)
	Elastic Modulus	>400 GPa
	Bulk Density	≥3.1 g/cm³
Functional Characteristics	Surface Flatness	≤1 μm
	Surface Roughness (Ra)	≤0.01 μm
	Adsorption Groove Accuracy	±5 μm
	Operating Temperature	Room temperature~400°C (electrostatic type)

Bonding-Specific SiC Vacuum Chuck Features

Precision Air Channel Machining
Mirror Polishing (or Mirror Finish)
Ultra-Low Coefficient of Thermal Expansion (Ultra-Low CTE)
High Stiffness
High Compactness
Surface Flatness and Parallelness up to 1 Micrometer (Surface Flatness & Parallelism ≤1 μm)

Bonding-Specific SiC Vacuum Chuck Applications

Bonding-specific SiC vacuum chucks are primarily used in the following high-end manufacturing scenarios:

Semiconductor Advanced Packaging: Used in chip-to-wafer (C2W) or wafer-to-wafer (W2W) bonding (e.g., Cu-Cu thermocompression bonding, hybrid bonding), supporting high-precision stacking in 3D IC and SiP packaging.
MEMS Sensor Packaging: Provides high-temperature (≤400°C) adsorption and insulation support in vacuum bonding or anodic bonding for microelectromechanical systems, avoiding damage to sensitive structures.
Power Device Interconnection: Used in silver sintering or transient liquid phase (TLP) bonding for SiC or GaN power modules, withstanding high temperatures while maintaining thermo-mechanical stability.
Photonic Integration and Display Driving: Supports Micro-LED mass transfer or glass-silicon interposer bonding, achieving micrometer-level pick-and-place accuracy (±1μm).

Recommendation for Customized SiC Ceramics Components

1. SiC Ceramic Vacuum Chuck Flip-Chip Bonding Mirror Polishing High-Stiffness

2. Customized SiC Ceramic Guide Rail Zero-Wear Corrosion-Resistant High-Speed

Bonding-Specific SiC Vacuum Chuck FAQ

Q1: Why choose a silicon carbide (SiC) vacuum chuck for bonding processes?

A1: SiC vacuum chucks are chosen for their exceptional thermal stability, ultra-low thermal expansion, and high stiffness, which ensure micron-level alignment accuracy and prevent wafer deformation during high-temperature bonding.

Q2: What are the primary applications of SiC vacuum chucks in semiconductor manufacturing?

A2: They are primarily used in advanced semiconductor packaging processes such as chip-to-wafer (C2W) and wafer-to-wafer (W2W) bonding, MEMS sensor encapsulation, and power device interconnection (e.g., SiC/GaN module sintering), where high temperature, precision alignment, and contamination control are critical.

Tags: #Bonding-Specific SiC Vacuum Chuck, #Customized, #Wafer Adsorption, #Surface Flatness ≤1μm

Etichette:

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