SiC Square Mirror Mirror-Grade Polishing for Lithography Machine
The Silicon Carbide (SiC) square mirror is a core precision component in high-end semiconductor manufacturing and precision optical equipment, such as lithography machines. It typically serves as the key sensor substrate within the wafer stage scanning and positioning feedback system. Its performance directly determines the equipment's overlay accuracy, line width uniformity, and production line yield.
The SiC square mirror's exceptional thermal stability, lightweight yet high-stiffness structure, nanoscale optical surface accuracy, and superior chemical stability make it crucial in the most advanced fields like EUV lithography, space remote sensing, and precision optical measurement. As semiconductor manufacturing processes advance towards smaller nodes and space exploration deepens, the performance requirements for it will become increasingly stringent, driving continuous development in its manufacturing and processing technologies.
SiC Square Mirror Key Material Characteristic Parameters
The following are the core material characteristic parameters directly related to the performance of the SiC square mirror:
| Parameter |
Typical Value/Range |
Significance |
| Coefficient of Thermal Expansion |
2.7 - 4.5 × 10⁻⁶/°C |
The lower the value, the better the thermal stability, minimizing deformation caused by ambient temperature changes and highly matching silicon wafers.
|
| Hardness |
HV2500 (or Mohs 9.5) |
Measures material wear resistance and ability to resist surface scratching; high hardness ensures long life.
|
| Surface Roughness (Ra) |
< 0.1 nm |
Characterizes surface smoothness; smaller values are better, forming the basis for high-quality optical reflection and imaging.
|
| Flatness |
λ/50 (@13.5nm) or higher |
Describes the flatness deviation of the optical surface; smaller values indicate a flatter surface, crucial for imaging quality.
|
| Lightweighting Rate |
60% - 90% |
Represents the percentage of weight reduction; high lightweighting helps reduce motion inertia, improving motion accuracy and speed.
|
| Elastic Modulus |
High (specific values vary greatly by process and structure) |
Measures the ability to resist elastic deformation; a high elastic modulus means high stiffness and resistance to bending.
|
SiC Square Mirror Key Features
1.Exceptional Thermal Stability: Silicon carbide exhibits an extremely low coefficient of thermal expansion (CTE) (approximately 2.7-4.5×10⁻⁶/°C), which closely matches that of silicon wafers. This enables it to effectively resist thermal deformation and maintain dimensional stability under temperature fluctuations.
2.Lightweight Design with High Stiffness: Through topology optimization, SiC mirrors can incorporate honeycomb or hollow internal structures, achieving a lightweighting rate of 60-90%. This significantly reduces their own weight while maintaining high stiffness (high elastic modulus) and a stable structural morphology.
3.Nanoscale Optical Surface: Utilizing advanced polishing techniques (e.g., laser-assisted chemical mechanical polishing), the surface can achieve mirror-grade finishing. The surface roughness can be controlled to Ra < 0.1 nm, and the flatness can reach λ/50 (@13.5nm) or higher, meeting extremely demanding surface figure accuracy requirements.
4.Chemical Stability and High Purity: Manufactured from high-purity silicon carbide material, it possesses excellent chemical inertness. It is resistant to acid/alkali corrosion and plasma erosion, making it suitable for semiconductor cleanroom environments and highly demanding optical systems.
SiC Square Mirror Summary of Main Application Areas
|
Application Area
|
Key Application Details
|
|
Extreme Ultraviolet (EUV) Lithography Machines
|
Key sensor substrate in the wafer stage scanning and positioning feedback system.
|
|
High-Resolution Space Remote Sensing Satellites
|
Core component for space telescopes (mirror blanks) and earth observation satellites.
|
|
High-End Optical Measurement & Detection Equipment
|
Provides reference plane in laser interferometers and precision measurement systems.
|
|
High-Energy Laser Systems
|
Used for mirrors and mirror blanks in high-energy lasers.
|
Q1: What is a silicon carbide (SiC) square mirror and what is it used for?
A1: A silicon carbide (SiC) square mirror is a high-precision, high-stability sensor substrate primarily used in the wafer stage scanning and positioning feedback system of lithography machines, where its exceptional thermal stability and nanoscale surface accuracy are critical for maintaining sub-nanometer motion and alignment precision, directly impacting overlay accuracy and line width uniformity in semiconductor manufacturing.
Q2: Why choose silicon carbide for square mirrors instead of traditional materials?
A2: Silicon carbide is chosen for its extremely low coefficient of thermal expansion (CTE) (≈2.7–4.5×10⁻⁶/℃), which closely matches silicon wafers to resist thermal deformation, and its high stiffness-to-weight ratio, enabling lightweight designs (e.g., honeycomb structures with 60–90% weight reduction) while maintaining structural stability and durability under extreme conditions.
Tags: # SiC Square Mirror, #Customized, #Silicon Carbide Ceramics, #Mirror-Grade Polishing, #Lithography Machine
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